High-Performance, N-Channel, Silicon Carbide Power Mosfet, Bcw120n80m1

Product Details
Application: Power Electronic Components
Batch Number: 2023+
Certification: RoHS
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Year of Establishment
2024-08-05
Address
No. 1519, Xinghai South Road, Zhuangshi Street, Zhenhai District, Shenzhen, Guangdong, ...
  • High-Performance, N-Channel, Silicon Carbide Power Mosfet, Bcw120n80m1
  • High-Performance, N-Channel, Silicon Carbide Power Mosfet, Bcw120n80m1
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Basic Info.

Model NO.
BCW120N80M1
Manufacturing Technology
Discrete Device
Material
Power Semiconductor
Model
Bcw120n80m1
Package
to-247-3L
Signal Processing
None
Type
N-Type Semiconductor
ID
30 a
Bvdss
1200 V
RDS(on),Typ
80 MΩ
Qg,Typ
50 Nc
Transport Package
Tube in Box
Specification
Silicon Carbide
Trademark
Xin Tech
Origin
China

Product Description

High-Performance, N-Channel, Silicon Carbide Power Mosfet, Bcw120n80m1

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