IGBT, IGBT Module, Mosfet manufacturer / supplier in China, offering 1200 V, 110 a, [Bc018sg12swsd], High Efficiency N-Channel Silicon Carbide Power Mosfet, 1200 V, 22 a, [Bcl120n160W1], High Efficiency N-Channel Silicon Carbide Power Mosfet, 1200 V, 69 a, [Bcz120n32W1], High Efficiency N-Channel Silicon Carbide Power Mosfet and so on.
| Business Type: | Trading Company | |
| Main Products: | Igbt | |
| Year of Establishment: | 2024-08-05 | |
| Address: | No. 1519, Xinghai South Road, Zhuangshi Street, Zhenhai District, Shenzhen, Guangdong, China |
The company operates under the Smart IDM model, focusing on the design, device development, production, sales, and application services of next-generation power semiconductor chips. It is committed to providing high-reliability, high-performance discrete devices, modules, and board-level solutions in industries such as new energy vehicles, computing power, energy storage, wind power, and industrial drives. Its products include third-generation semiconductor Silicon Carbide (SiC) MOSFETs and modules in the ...